Nombor Bahagian : | RN1910FE,LF(CT |
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Pengilang / jenama : | Toshiba Semiconductor and Storage |
Penerangan : | TRANS 2NPN PREBIAS 0.1W ES6 |
Status RoHS : | Lead percuma / RoHS Compliant |
Kuantiti Tersedia | 1085744 pcs |
Helaian data | RN1910FE,LF(CT.pdf |
Voltan - Collector Pemancar Kerosakan (Max) | 50V |
VCE Ketepuan (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Jenis transistor | 2 NPN - Pre-Biased (Dual) |
Pembekal Peranti Pakej | ES6 |
Siri | - |
Rintangan - Pangkalan Penggabungan (R2) | - |
Resistor - Base (R1) | 4.7 kOhms |
Power - Max | 100mW |
pembungkusan | Tape & Reel (TR) |
Pakej / Kes | SOT-563, SOT-666 |
Nama lain | RN1910FE,LF(CB RN1910FELF(CTTR |
pemasangan Jenis | Surface Mount |
Tahap Sensitiviti Lembapan (MSL) | 1 (Unlimited) |
Pengilang Standard Lead Time | 16 Weeks |
Status Status Percuma / Rosh Status | Lead free / RoHS Compliant |
Kekerapan - Peralihan | 250MHz |
Penerangan terperinci | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6 |
DC Gain semasa (hFE) (Min) @ Ic, VCE | 120 @ 1mA, 5V |
Semasa - Cutoff Pemungut (Max) | 100nA (ICBO) |
Semasa - Collector (Ic) (Max) | 100mA |