Nombor Bahagian : |
RN1909FE(TE85L,F) |
Pengilang / jenama : |
Toshiba Semiconductor and Storage |
Penerangan : |
TRANS 2NPN PREBIAS 0.1W ES6 |
Status RoHS : |
Lead percuma / RoHS Compliant |
Kuantiti Tersedia |
390171 pcs |
Helaian data |
RN1909FE(TE85L,F).pdf |
Voltan - Collector Pemancar Kerosakan (Max) |
50V |
VCE Ketepuan (Max) @ Ib, Ic |
300mV @ 250µA, 5mA |
Jenis transistor |
2 NPN - Pre-Biased (Dual) |
Pembekal Peranti Pakej |
ES6 |
Siri |
- |
Rintangan - Pangkalan Penggabungan (R2) |
22 kOhms |
Resistor - Base (R1) |
47 kOhms |
Power - Max |
100mW |
pembungkusan |
Cut Tape (CT) |
Pakej / Kes |
SOT-563, SOT-666 |
Nama lain |
RN1909FE(TE85LF)CT |
pemasangan Jenis |
Surface Mount |
Tahap Sensitiviti Lembapan (MSL) |
1 (Unlimited) |
Status Status Percuma / Rosh Status |
Lead free / RoHS Compliant |
Kekerapan - Peralihan |
250MHz |
Penerangan terperinci |
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6 |
DC Gain semasa (hFE) (Min) @ Ic, VCE |
70 @ 10mA, 5V |
Semasa - Cutoff Pemungut (Max) |
100nA (ICBO) |
Semasa - Collector (Ic) (Max) |
100mA |