Nombor Bahagian : | EPC2110 |
---|---|
Pengilang / jenama : | EPC |
Penerangan : | MOSFET 2NCH 120V 3.4A DIE |
Status RoHS : | Lead percuma / RoHS Compliant |
Kuantiti Tersedia | 28253 pcs |
Helaian data | EPC2110.pdf |
VGS (th) (Max) @ Id | 2.5V @ 700µA |
Pembekal Peranti Pakej | Die |
Siri | eGaN® |
Rds On (Max) @ Id, VGS | 60 mOhm @ 4A, 5V |
Power - Max | - |
pembungkusan | Cut Tape (CT) |
Pakej / Kes | Die |
Nama lain | 917-1152-1 |
Suhu Operasi | -40°C ~ 150°C (TJ) |
Tahap Sensitiviti Lembapan (MSL) | 1 (Unlimited) |
Pengilang Standard Lead Time | 14 Weeks |
Status Status Percuma / Rosh Status | Lead free / RoHS Compliant |
Input kemuatan (CISS) (Max) @ Vds | 80pF @ 60V |
Gate Charge (QG) (Max) @ VGS | 0.8nC @ 5V |
Jenis FET | 2 N-Channel (Dual) Common Drain |
FET Ciri | GaNFET (Gallium Nitride) |
Parit untuk Source Voltan (Vdss) | 120V |
Penerangan terperinci | Mosfet Array 2 N-Channel (Dual) Common Drain 120V 3.4A Die |
Semasa - Drain berterusan (Id) @ 25 ° C | 3.4A |