Nombor Bahagian : |
EPC2107ENGRT |
Pengilang / jenama : |
EPC |
Penerangan : |
TRANS GAN 3N-CH 100V BUMPED DIE |
Status RoHS : |
Lead percuma / RoHS Compliant |
Kuantiti Tersedia |
33224 pcs |
Helaian data |
EPC2107ENGRT.pdf |
VGS (th) (Max) @ Id |
2.5V @ 100µA, 2.5V @ 20µA |
Pembekal Peranti Pakej |
9-BGA (1.35x1.35) |
Siri |
eGaN® |
Rds On (Max) @ Id, VGS |
320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V |
Power - Max |
- |
pembungkusan |
Tape & Reel (TR) |
Pakej / Kes |
9-VFBGA |
Nama lain |
917-EPC2107ENGRTR |
Suhu Operasi |
-40°C ~ 150°C (TJ) |
pemasangan Jenis |
Surface Mount |
Tahap Sensitiviti Lembapan (MSL) |
1 (Unlimited) |
Status Status Percuma / Rosh Status |
Lead free / RoHS Compliant |
Input kemuatan (CISS) (Max) @ Vds |
16pF @ 50V, 7pF @ 50V |
Gate Charge (QG) (Max) @ VGS |
0.16nC @ 5V, 0.044nC @ 5V |
Jenis FET |
3 N-Channel (Half Bridge + Synchronous Bootstrap) |
FET Ciri |
GaNFET (Gallium Nitride) |
Parit untuk Source Voltan (Vdss) |
100V |
Penerangan terperinci |
Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35) |
Semasa - Drain berterusan (Id) @ 25 ° C |
1.7A, 500mA |