| Nombor Bahagian : | TK46E08N1,S1X |
|---|---|
| Pengilang / jenama : | Toshiba Semiconductor and Storage |
| Penerangan : | MOSFET N-CH 80V 80A TO-220 |
| Status RoHS : | Lead percuma / RoHS Compliant |
| Kuantiti Tersedia | 4486 pcs |
| Helaian data | TK46E08N1,S1X.pdf |
| VGS (th) (Max) @ Id | 4V @ 500µA |
| VGS (Max) | ±20V |
| Teknologi | MOSFET (Metal Oxide) |
| Pembekal Peranti Pakej | TO-220 |
| Siri | U-MOSVIII-H |
| Rds On (Max) @ Id, VGS | 8.4 mOhm @ 23A, 10V |
| Kuasa Penyebaran (Max) | 103W (Tc) |
| pembungkusan | Tube |
| Pakej / Kes | TO-220-3 |
| Nama lain | TK46E08N1,S1X(S TK46E08N1S1X |
| Suhu Operasi | 150°C (TJ) |
| pemasangan Jenis | Through Hole |
| Tahap Sensitiviti Lembapan (MSL) | 1 (Unlimited) |
| Status Status Percuma / Rosh Status | Lead free / RoHS Compliant |
| Input kemuatan (CISS) (Max) @ Vds | 2500pF @ 40V |
| Gate Charge (QG) (Max) @ VGS | 37nC @ 10V |
| Jenis FET | N-Channel |
| FET Ciri | - |
| Drive Voltan (Max Rds On, Min Rds On) | 10V |
| Parit untuk Source Voltan (Vdss) | 80V |
| Penerangan terperinci | N-Channel 80V 80A (Tc) 103W (Tc) Through Hole TO-220 |
| Semasa - Drain berterusan (Id) @ 25 ° C | 80A (Tc) |
Toshiba Semiconductor and Storage
