| Nombor Bahagian : | TJ30S06M3L(T6L1,NQ |
|---|---|
| Pengilang / jenama : | Toshiba Semiconductor and Storage |
| Penerangan : | MOSFET P-CH 60V 30A DPAK-3 |
| Status RoHS : | Lead percuma / RoHS Compliant |
| Kuantiti Tersedia | 43346 pcs |
| Helaian data | 1.TJ30S06M3L(T6L1,NQ.pdf2.TJ30S06M3L(T6L1,NQ.pdf |
| VGS (th) (Max) @ Id | 3V @ 1mA |
| VGS (Max) | +10V, -20V |
| Teknologi | MOSFET (Metal Oxide) |
| Pembekal Peranti Pakej | DPAK+ |
| Siri | U-MOSVI |
| Rds On (Max) @ Id, VGS | 21.8 mOhm @ 15A, 10V |
| Kuasa Penyebaran (Max) | 68W (Tc) |
| pembungkusan | Tape & Reel (TR) |
| Pakej / Kes | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Nama lain | TJ30S06M3L(T6L1NQ TJ30S06M3LT6L1NQ |
| Suhu Operasi | 175°C (TJ) |
| pemasangan Jenis | Surface Mount |
| Tahap Sensitiviti Lembapan (MSL) | 1 (Unlimited) |
| Status Status Percuma / Rosh Status | Lead free / RoHS Compliant |
| Input kemuatan (CISS) (Max) @ Vds | 3950pF @ 10V |
| Gate Charge (QG) (Max) @ VGS | 80nC @ 10V |
| Jenis FET | P-Channel |
| FET Ciri | - |
| Drive Voltan (Max Rds On, Min Rds On) | 6V, 10V |
| Parit untuk Source Voltan (Vdss) | 60V |
| Penerangan terperinci | P-Channel 60V 30A (Ta) 68W (Tc) Surface Mount DPAK+ |
| Semasa - Drain berterusan (Id) @ 25 ° C | 30A (Ta) |
