| Nombor Bahagian : | STU6N60M2 |
|---|---|
| Pengilang / jenama : | STMicroelectronics |
| Penerangan : | MOSFET N-CH 600V IPAK |
| Status RoHS : | Lead percuma / RoHS Compliant |
| Kuantiti Tersedia | 51444 pcs |
| Helaian data | STU6N60M2.pdf |
| VGS (th) (Max) @ Id | 4V @ 250µA |
| VGS (Max) | ±25V |
| Teknologi | MOSFET (Metal Oxide) |
| Pembekal Peranti Pakej | I-PAK |
| Siri | MDmesh™ II Plus |
| Rds On (Max) @ Id, VGS | 1.2 Ohm @ 2.25A, 10V |
| Kuasa Penyebaran (Max) | 60W (Tc) |
| pembungkusan | Tube |
| Pakej / Kes | TO-251-3 Short Leads, IPak, TO-251AA |
| Nama lain | 497-13978-5 STU6N60M2-ND |
| Suhu Operasi | -55°C ~ 150°C (TJ) |
| pemasangan Jenis | Through Hole |
| Tahap Sensitiviti Lembapan (MSL) | 1 (Unlimited) |
| Status Status Percuma / Rosh Status | Lead free / RoHS Compliant |
| Input kemuatan (CISS) (Max) @ Vds | 232pF @ 100V |
| Gate Charge (QG) (Max) @ VGS | 13.5nC @ 10V |
| Jenis FET | N-Channel |
| FET Ciri | - |
| Drive Voltan (Max Rds On, Min Rds On) | 10V |
| Parit untuk Source Voltan (Vdss) | 600V |
| Penerangan terperinci | N-Channel 600V 4.5A (Tc) 60W (Tc) Through Hole I-PAK |
| Semasa - Drain berterusan (Id) @ 25 ° C | 4.5A (Tc) |
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