Nombor Bahagian : |
SQD25N06-22L_T4GE3 |
Pengilang / jenama : |
Electro-Films (EFI) / Vishay |
Penerangan : |
MOSFET N-CH 60V 25A TO252AA |
Status RoHS : |
|
Kuantiti Tersedia |
45031 pcs |
Helaian data |
SQD25N06-22L_T4GE3.pdf |
VGS (th) (Max) @ Id |
2.5V @ 250µA |
VGS (Max) |
±20V |
Teknologi |
MOSFET (Metal Oxide) |
Pembekal Peranti Pakej |
TO-252AA |
Siri |
Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, VGS |
22 mOhm @ 20A, 10V |
Kuasa Penyebaran (Max) |
62W (Tc) |
pembungkusan |
Tape & Reel (TR) |
Pakej / Kes |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
Suhu Operasi |
-55°C ~ 175°C (TJ) |
pemasangan Jenis |
Surface Mount |
Input kemuatan (CISS) (Max) @ Vds |
1975pF @ 25V |
Gate Charge (QG) (Max) @ VGS |
50nC @ 10V |
Jenis FET |
N-Channel |
FET Ciri |
- |
Drive Voltan (Max Rds On, Min Rds On) |
4.5V, 10V |
Parit untuk Source Voltan (Vdss) |
60V |
Penerangan terperinci |
N-Channel 60V 25A (Tc) 62W (Tc) Surface Mount TO-252AA |
Semasa - Drain berterusan (Id) @ 25 ° C |
25A (Tc) |