| Nombor Bahagian : | SIHP28N65E-GE3 |
|---|---|
| Pengilang / jenama : | Electro-Films (EFI) / Vishay |
| Penerangan : | MOSFET N-CH 650V 29A TO220AB |
| Status RoHS : | |
| Kuantiti Tersedia | 10695 pcs |
| Helaian data | SIHP28N65E-GE3.pdf |
| VGS (th) (Max) @ Id | 4V @ 250µA |
| VGS (Max) | ±30V |
| Teknologi | MOSFET (Metal Oxide) |
| Pembekal Peranti Pakej | TO-220AB |
| Siri | - |
| Rds On (Max) @ Id, VGS | 112 mOhm @ 14A, 10V |
| Kuasa Penyebaran (Max) | 250W (Tc) |
| pembungkusan | Tube |
| Pakej / Kes | TO-220-3 |
| Suhu Operasi | -55°C ~ 150°C (TJ) |
| pemasangan Jenis | Through Hole |
| Input kemuatan (CISS) (Max) @ Vds | 3405pF @ 100V |
| Gate Charge (QG) (Max) @ VGS | 140nC @ 10V |
| Jenis FET | N-Channel |
| FET Ciri | - |
| Drive Voltan (Max Rds On, Min Rds On) | 10V |
| Parit untuk Source Voltan (Vdss) | 650V |
| Penerangan terperinci | N-Channel 650V 29A (Tc) 250W (Tc) Through Hole TO-220AB |
| Semasa - Drain berterusan (Id) @ 25 ° C | 29A (Tc) |
Electro-Films (EFI) / Vishay
