Nombor Bahagian : | SI8851EDB-T2-E1 |
---|---|
Pengilang / jenama : | Electro-Films (EFI) / Vishay |
Penerangan : | MOSFET P-CH 20V 7.7A MICRO FOOT |
Status RoHS : | Lead percuma / RoHS Compliant |
Kuantiti Tersedia | 125829 pcs |
Helaian data | SI8851EDB-T2-E1.pdf |
VGS (th) (Max) @ Id | 1V @ 250µA |
VGS (Max) | ±8V |
Teknologi | MOSFET (Metal Oxide) |
Pembekal Peranti Pakej | Power Micro Foot® (2.4x2) |
Siri | TrenchFET® |
Rds On (Max) @ Id, VGS | 8 mOhm @ 7A, 4.5V |
Kuasa Penyebaran (Max) | 660mW (Ta) |
pembungkusan | Tape & Reel (TR) |
Pakej / Kes | 30-XFBGA |
Nama lain | SI8851EDB-T2-E1TR |
Suhu Operasi | -55°C ~ 150°C (TJ) |
pemasangan Jenis | Surface Mount |
Tahap Sensitiviti Lembapan (MSL) | 1 (Unlimited) |
Status Status Percuma / Rosh Status | Lead free / RoHS Compliant |
Input kemuatan (CISS) (Max) @ Vds | 6900pF @ 10V |
Gate Charge (QG) (Max) @ VGS | 180nC @ 8V |
Jenis FET | P-Channel |
FET Ciri | - |
Drive Voltan (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Parit untuk Source Voltan (Vdss) | 20V |
Penerangan terperinci | P-Channel 20V 7.7A (Ta) 660mW (Ta) Surface Mount Power Micro Foot® (2.4x2) |
Semasa - Drain berterusan (Id) @ 25 ° C | 7.7A (Ta) |
Nombor Bahagian Asas | SI8851 |