Nombor Bahagian : | SI7368DP-T1-GE3 |
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Pengilang / jenama : | Electro-Films (EFI) / Vishay |
Penerangan : | MOSFET N-CH 20V 13A PPAK SO-8 |
Status RoHS : | Lead percuma / RoHS Compliant |
Kuantiti Tersedia | 5104 pcs |
Helaian data | SI7368DP-T1-GE3.pdf |
VGS (th) (Max) @ Id | 1.8V @ 250µA |
VGS (Max) | ±16V |
Teknologi | MOSFET (Metal Oxide) |
Pembekal Peranti Pakej | PowerPAK® SO-8 |
Siri | TrenchFET® |
Rds On (Max) @ Id, VGS | 5.5 mOhm @ 20A, 10V |
Kuasa Penyebaran (Max) | 1.7W (Ta) |
pembungkusan | Tape & Reel (TR) |
Pakej / Kes | PowerPAK® SO-8 |
Suhu Operasi | -55°C ~ 150°C (TJ) |
pemasangan Jenis | Surface Mount |
Tahap Sensitiviti Lembapan (MSL) | 1 (Unlimited) |
Status Status Percuma / Rosh Status | Lead free / RoHS Compliant |
Gate Charge (QG) (Max) @ VGS | 25nC @ 4.5V |
Jenis FET | N-Channel |
FET Ciri | - |
Drive Voltan (Max Rds On, Min Rds On) | 4.5V, 10V |
Parit untuk Source Voltan (Vdss) | 20V |
Penerangan terperinci | N-Channel 20V 13A (Ta) 1.7W (Ta) Surface Mount PowerPAK® SO-8 |
Semasa - Drain berterusan (Id) @ 25 ° C | 13A (Ta) |