Nombor Bahagian : | SI5920DC-T1-GE3 |
---|---|
Pengilang / jenama : | Electro-Films (EFI) / Vishay |
Penerangan : | MOSFET 2N-CH 8V 4A 1206-8 |
Status RoHS : | Lead percuma / RoHS Compliant |
Kuantiti Tersedia | 4349 pcs |
Helaian data | SI5920DC-T1-GE3.pdf |
VGS (th) (Max) @ Id | 1V @ 250µA |
Pembekal Peranti Pakej | 1206-8 ChipFET™ |
Siri | TrenchFET® |
Rds On (Max) @ Id, VGS | 32 mOhm @ 6.8A, 4.5V |
Power - Max | 3.12W |
pembungkusan | Tape & Reel (TR) |
Pakej / Kes | 8-SMD, Flat Lead |
Nama lain | SI5920DC-T1-GE3TR |
Suhu Operasi | -55°C ~ 150°C (TJ) |
pemasangan Jenis | Surface Mount |
Tahap Sensitiviti Lembapan (MSL) | 1 (Unlimited) |
Status Status Percuma / Rosh Status | Lead free / RoHS Compliant |
Input kemuatan (CISS) (Max) @ Vds | 680pF @ 4V |
Gate Charge (QG) (Max) @ VGS | 12nC @ 5V |
Jenis FET | 2 N-Channel (Dual) |
FET Ciri | Logic Level Gate |
Parit untuk Source Voltan (Vdss) | 8V |
Penerangan terperinci | Mosfet Array 2 N-Channel (Dual) 8V 4A 3.12W Surface Mount 1206-8 ChipFET™ |
Semasa - Drain berterusan (Id) @ 25 ° C | 4A |
Nombor Bahagian Asas | SI5920 |