| Nombor Bahagian : | SI5513CDC-T1-GE3 |
|---|---|
| Pengilang / jenama : | Electro-Films (EFI) / Vishay |
| Penerangan : | MOSFET N/P-CH 20V 4A 1206-8 |
| Status RoHS : | Lead percuma / RoHS Compliant |
| Kuantiti Tersedia | 144369 pcs |
| Helaian data | SI5513CDC-T1-GE3.pdf |
| VGS (th) (Max) @ Id | 1.5V @ 250µA |
| Pembekal Peranti Pakej | 1206-8 ChipFET™ |
| Siri | TrenchFET® |
| Rds On (Max) @ Id, VGS | 55 mOhm @ 4.4A, 4.5V |
| Power - Max | 3.1W |
| pembungkusan | Tape & Reel (TR) |
| Pakej / Kes | 8-SMD, Flat Lead |
| Nama lain | SI5513CDC-T1-GE3TR SI5513CDCT1GE3 |
| Suhu Operasi | -55°C ~ 150°C (TJ) |
| pemasangan Jenis | Surface Mount |
| Tahap Sensitiviti Lembapan (MSL) | 1 (Unlimited) |
| Status Status Percuma / Rosh Status | Lead free / RoHS Compliant |
| Input kemuatan (CISS) (Max) @ Vds | 285pF @ 10V |
| Gate Charge (QG) (Max) @ VGS | 4.2nC @ 5V |
| Jenis FET | N and P-Channel |
| FET Ciri | Logic Level Gate |
| Parit untuk Source Voltan (Vdss) | 20V |
| Penerangan terperinci | Mosfet Array N and P-Channel 20V 4A, 3.7A 3.1W Surface Mount 1206-8 ChipFET™ |
| Semasa - Drain berterusan (Id) @ 25 ° C | 4A, 3.7A |
| Nombor Bahagian Asas | SI5513 |
Electro-Films (EFI) / Vishay
