| Nombor Bahagian : | SI4922BDY-T1-GE3 |
|---|---|
| Pengilang / jenama : | Electro-Films (EFI) / Vishay |
| Penerangan : | MOSFET 2N-CH 30V 8A 8-SOIC |
| Status RoHS : | Lead percuma / RoHS Compliant |
| Kuantiti Tersedia | 39052 pcs |
| Helaian data | SI4922BDY-T1-GE3.pdf |
| VGS (th) (Max) @ Id | 1.8V @ 250µA |
| Pembekal Peranti Pakej | 8-SO |
| Siri | TrenchFET® |
| Rds On (Max) @ Id, VGS | 16 mOhm @ 5A, 10V |
| Power - Max | 3.1W |
| pembungkusan | Tape & Reel (TR) |
| Pakej / Kes | 8-SOIC (0.154", 3.90mm Width) |
| Nama lain | SI4922BDY-T1-GE3-ND SI4922BDY-T1-GE3TR |
| Suhu Operasi | -55°C ~ 150°C (TJ) |
| pemasangan Jenis | Surface Mount |
| Tahap Sensitiviti Lembapan (MSL) | 1 (Unlimited) |
| Pengilang Standard Lead Time | 33 Weeks |
| Status Status Percuma / Rosh Status | Lead free / RoHS Compliant |
| Input kemuatan (CISS) (Max) @ Vds | 2070pF @ 15V |
| Gate Charge (QG) (Max) @ VGS | 62nC @ 10V |
| Jenis FET | 2 N-Channel (Dual) |
| FET Ciri | Standard |
| Parit untuk Source Voltan (Vdss) | 30V |
| Penerangan terperinci | Mosfet Array 2 N-Channel (Dual) 30V 8A 3.1W Surface Mount 8-SO |
| Semasa - Drain berterusan (Id) @ 25 ° C | 8A |
| Nombor Bahagian Asas | SI4922 |
