Nombor Bahagian : | SI3905DV-T1-GE3 |
---|---|
Pengilang / jenama : | Electro-Films (EFI) / Vishay |
Penerangan : | MOSFET 2P-CH 8V 6-TSOP |
Status RoHS : | Lead percuma / RoHS Compliant |
Kuantiti Tersedia | 4549 pcs |
Helaian data | SI3905DV-T1-GE3.pdf |
VGS (th) (Max) @ Id | 450mV @ 250µA (Min) |
Pembekal Peranti Pakej | 6-TSOP |
Siri | TrenchFET® |
Rds On (Max) @ Id, VGS | 125 mOhm @ 2.5A, 4.5V |
Power - Max | 1.15W |
pembungkusan | Tape & Reel (TR) |
Pakej / Kes | SOT-23-6 Thin, TSOT-23-6 |
Suhu Operasi | -55°C ~ 150°C (TJ) |
pemasangan Jenis | Surface Mount |
Tahap Sensitiviti Lembapan (MSL) | 1 (Unlimited) |
Status Status Percuma / Rosh Status | Lead free / RoHS Compliant |
Input kemuatan (CISS) (Max) @ Vds | - |
Gate Charge (QG) (Max) @ VGS | 6nC @ 4.5V |
Jenis FET | 2 P-Channel (Dual) |
FET Ciri | Logic Level Gate |
Parit untuk Source Voltan (Vdss) | 8V |
Penerangan terperinci | Mosfet Array 2 P-Channel (Dual) 8V 1.15W Surface Mount 6-TSOP |
Semasa - Drain berterusan (Id) @ 25 ° C | - |