| Nombor Bahagian : | SCT3120ALGC11 |
|---|---|
| Pengilang / jenama : | LAPIS Semiconductor |
| Penerangan : | MOSFET NCH 650V 21A TO247N |
| Status RoHS : | Lead percuma / RoHS Compliant |
| Kuantiti Tersedia | 5101 pcs |
| Helaian data | 1.SCT3120ALGC11.pdf2.SCT3120ALGC11.pdf |
| VGS (th) (Max) @ Id | 5.6V @ 3.33mA |
| VGS (Max) | +22V, -4V |
| Teknologi | SiCFET (Silicon Carbide) |
| Pembekal Peranti Pakej | TO-247N |
| Siri | - |
| Rds On (Max) @ Id, VGS | 156 mOhm @ 6.7A, 18V |
| Kuasa Penyebaran (Max) | 103W (Tc) |
| pembungkusan | Tube |
| Pakej / Kes | TO-247-3 |
| Suhu Operasi | 175°C (TJ) |
| pemasangan Jenis | Through Hole |
| Tahap Sensitiviti Lembapan (MSL) | 1 (Unlimited) |
| Status Status Percuma / Rosh Status | Lead free / RoHS Compliant |
| Input kemuatan (CISS) (Max) @ Vds | 460pF @ 500V |
| Gate Charge (QG) (Max) @ VGS | 38nC @ 18V |
| Jenis FET | N-Channel |
| FET Ciri | - |
| Drive Voltan (Max Rds On, Min Rds On) | 18V |
| Parit untuk Source Voltan (Vdss) | 650V |
| Penerangan terperinci | N-Channel 650V 21A (Tc) 103W (Tc) Through Hole TO-247N |
| Semasa - Drain berterusan (Id) @ 25 ° C | 21A (Tc) |
LAPIS Semiconductor
