Nombor Bahagian : | RN1130MFV,L3F |
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Pengilang / jenama : | Toshiba Semiconductor and Storage |
Penerangan : | TRANS PREBIAS NPN 0.15W VESM |
Status RoHS : | Lead percuma / RoHS Compliant |
Kuantiti Tersedia | 1062775 pcs |
Helaian data | RN1130MFV,L3F.pdf |
Voltan - Collector Pemancar Kerosakan (Max) | 50V |
VCE Ketepuan (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
Jenis transistor | NPN - Pre-Biased |
Pembekal Peranti Pakej | VESM |
Siri | - |
Rintangan - Pangkalan Penggabungan (R2) | 100 kOhms |
Resistor - Base (R1) | 100 kOhms |
Power - Max | 150mW |
pembungkusan | Tape & Reel (TR) |
Pakej / Kes | SOT-723 |
Nama lain | RN1130MFV(TL3,T) RN1130MFV(TL3T)TR RN1130MFV(TL3T)TR-ND RN1130MFV,L3F(B RN1130MFV,L3F(T RN1130MFVL3F RN1130MFVL3F-ND RN1130MFVL3FTR RN1130MFVTL3T |
pemasangan Jenis | Surface Mount |
Tahap Sensitiviti Lembapan (MSL) | 1 (Unlimited) |
Pengilang Standard Lead Time | 16 Weeks |
Status Status Percuma / Rosh Status | Lead free / RoHS Compliant |
Kekerapan - Peralihan | 250MHz |
Penerangan terperinci | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VESM |
DC Gain semasa (hFE) (Min) @ Ic, VCE | 100 @ 10mA, 5V |
Semasa - Cutoff Pemungut (Max) | 500nA |
Semasa - Collector (Ic) (Max) | 100mA |