Nombor Bahagian : | NSBA123JDXV6T1G |
---|---|
Pengilang / jenama : | AMI Semiconductor / ON Semiconductor |
Penerangan : | TRANS 2PNP PREBIAS 0.5W SOT563 |
Status RoHS : | Lead percuma / RoHS Compliant |
Kuantiti Tersedia | 5924 pcs |
Helaian data | NSBA123JDXV6T1G.pdf |
Voltan - Collector Pemancar Kerosakan (Max) | 50V |
VCE Ketepuan (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Jenis transistor | 2 PNP - Pre-Biased (Dual) |
Pembekal Peranti Pakej | SOT-563 |
Siri | - |
Rintangan - Pangkalan Penggabungan (R2) | 47 kOhms |
Resistor - Base (R1) | 2.2 kOhms |
Power - Max | 500mW |
pembungkusan | Tape & Reel (TR) |
Pakej / Kes | SOT-563, SOT-666 |
Nama lain | NSBA123JDXV6T1GOS NSBA123JDXV6T1GOS-ND NSBA123JDXV6T1GOSTR |
pemasangan Jenis | Surface Mount |
Tahap Sensitiviti Lembapan (MSL) | 1 (Unlimited) |
Status Status Percuma / Rosh Status | Lead free / RoHS Compliant |
Kekerapan - Peralihan | - |
Penerangan terperinci | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563 |
DC Gain semasa (hFE) (Min) @ Ic, VCE | 80 @ 5mA, 10V |
Semasa - Cutoff Pemungut (Max) | 500nA |
Semasa - Collector (Ic) (Max) | 100mA |
Nombor Bahagian Asas | NSBA1* |