| Nombor Bahagian : | IXFX120N20 |
|---|---|
| Pengilang / jenama : | IXYS Corporation |
| Penerangan : | MOSFET N-CH 200V 120A PLUS247 |
| Status RoHS : | Lead percuma / RoHS Compliant |
| Kuantiti Tersedia | 2240 pcs |
| Helaian data | IXFX120N20.pdf |
| VGS (th) (Max) @ Id | 4V @ 8mA |
| VGS (Max) | ±20V |
| Teknologi | MOSFET (Metal Oxide) |
| Pembekal Peranti Pakej | PLUS247™-3 |
| Siri | HiPerFET™ |
| Rds On (Max) @ Id, VGS | 17 mOhm @ 60A, 10V |
| Kuasa Penyebaran (Max) | 560W (Tc) |
| pembungkusan | Tube |
| Pakej / Kes | TO-247-3 |
| Nama lain | IFX120N20 |
| Suhu Operasi | -55°C ~ 150°C (TJ) |
| pemasangan Jenis | Through Hole |
| Status Status Percuma / Rosh Status | Lead free / RoHS Compliant |
| Input kemuatan (CISS) (Max) @ Vds | 9100pF @ 25V |
| Gate Charge (QG) (Max) @ VGS | 300nC @ 10V |
| Jenis FET | N-Channel |
| FET Ciri | - |
| Drive Voltan (Max Rds On, Min Rds On) | 10V |
| Parit untuk Source Voltan (Vdss) | 200V |
| Penerangan terperinci | N-Channel 200V 120A (Tc) 560W (Tc) Through Hole PLUS247™-3 |
| Semasa - Drain berterusan (Id) @ 25 ° C | 120A (Tc) |
IXYS Corporation
