Nombor Bahagian : | GP2M002A065FG |
---|---|
Pengilang / jenama : | Global Power Technologies Group |
Penerangan : | MOSFET N-CH 650V 1.8A TO220F |
Status RoHS : | Lead percuma / RoHS Compliant |
Kuantiti Tersedia | 4441 pcs |
Helaian data | GP2M002A065FG.pdf |
VGS (th) (Max) @ Id | 5V @ 250µA |
VGS (Max) | ±30V |
Teknologi | MOSFET (Metal Oxide) |
Pembekal Peranti Pakej | TO-220F |
Siri | - |
Rds On (Max) @ Id, VGS | 4.6 Ohm @ 900mA, 10V |
Kuasa Penyebaran (Max) | 17.3W (Tc) |
pembungkusan | Tape & Reel (TR) |
Pakej / Kes | TO-220-3 Full Pack |
Suhu Operasi | -55°C ~ 150°C (TJ) |
pemasangan Jenis | Through Hole |
Tahap Sensitiviti Lembapan (MSL) | 1 (Unlimited) |
Status Status Percuma / Rosh Status | Lead free / RoHS Compliant |
Input kemuatan (CISS) (Max) @ Vds | 353pF @ 25V |
Gate Charge (QG) (Max) @ VGS | 8.5nC @ 10V |
Jenis FET | N-Channel |
FET Ciri | - |
Drive Voltan (Max Rds On, Min Rds On) | 10V |
Parit untuk Source Voltan (Vdss) | 650V |
Penerangan terperinci | N-Channel 650V 1.8A (Tc) 17.3W (Tc) Through Hole TO-220F |
Semasa - Drain berterusan (Id) @ 25 ° C | 1.8A (Tc) |