| Nombor Bahagian : | FDMD8900 |
|---|---|
| Pengilang / jenama : | AMI Semiconductor / ON Semiconductor |
| Penerangan : | MOSFET 2N-CH 30V POWER |
| Status RoHS : | Lead percuma / RoHS Compliant |
| Kuantiti Tersedia | 31229 pcs |
| Helaian data | FDMD8900.pdf |
| VGS (th) (Max) @ Id | 2.5V @ 250µA |
| Pembekal Peranti Pakej | 12-Power3.3x5 |
| Siri | - |
| Rds On (Max) @ Id, VGS | 4 mOhm @ 19A, 10V |
| Power - Max | 2.1W |
| pembungkusan | Tape & Reel (TR) |
| Pakej / Kes | 12-PowerWDFN |
| Nama lain | FDMD8900TR |
| Suhu Operasi | -55°C ~ 150°C (TJ) |
| pemasangan Jenis | Surface Mount |
| Tahap Sensitiviti Lembapan (MSL) | 1 (Unlimited) |
| Pengilang Standard Lead Time | 39 Weeks |
| Status Status Percuma / Rosh Status | Lead free / RoHS Compliant |
| Input kemuatan (CISS) (Max) @ Vds | 2605pF @ 15V |
| Gate Charge (QG) (Max) @ VGS | 35nC @ 10V |
| Jenis FET | 2 N-Channel (Dual) |
| FET Ciri | Standard |
| Parit untuk Source Voltan (Vdss) | 30V |
| Penerangan terperinci | Mosfet Array 2 N-Channel (Dual) 30V 19A, 17A 2.1W Surface Mount 12-Power3.3x5 |
| Semasa - Drain berterusan (Id) @ 25 ° C | 19A, 17A |
AMI Semiconductor / ON Semiconductor
