| Nombor Bahagian : | FCP165N65S3R0 |
|---|---|
| Pengilang / jenama : | AMI Semiconductor / ON Semiconductor |
| Penerangan : | SUPERFET3 650V TO220 PKG |
| Status RoHS : | |
| Kuantiti Tersedia | 20466 pcs |
| Helaian data | FCP165N65S3R0.pdf |
| VGS (th) (Max) @ Id | 4.5V @ 1.9mA |
| VGS (Max) | ±30V |
| Teknologi | MOSFET (Metal Oxide) |
| Pembekal Peranti Pakej | TO-220-3 |
| Siri | SuperFET® III |
| Rds On (Max) @ Id, VGS | 165 mOhm @ 9.5A, 10V |
| Kuasa Penyebaran (Max) | 154W (Tc) |
| pembungkusan | Tube |
| Pakej / Kes | TO-220-3 |
| Suhu Operasi | -55°C ~ 150°C (TJ) |
| pemasangan Jenis | Through Hole |
| Memimpin Status Bebas | Lead free |
| Input kemuatan (CISS) (Max) @ Vds | 1500pF @ 400V |
| Gate Charge (QG) (Max) @ VGS | 39nC @ 10V |
| Jenis FET | N-Channel |
| FET Ciri | - |
| Drive Voltan (Max Rds On, Min Rds On) | 10V |
| Parit untuk Source Voltan (Vdss) | 650V |
| Penerangan terperinci | N-Channel 650V 19A (Tc) 154W (Tc) Through Hole TO-220-3 |
| Semasa - Drain berterusan (Id) @ 25 ° C | 19A (Tc) |
