| Nombor Bahagian : | EPC8010ENGR |
|---|---|
| Pengilang / jenama : | EPC |
| Penerangan : | TRANS GAN 100V 2.7A BUMPED DIE |
| Status RoHS : | Lead percuma / RoHS Compliant |
| Kuantiti Tersedia | 1834 pcs |
| Helaian data | EPC8010ENGR.pdf |
| Voltan - Ujian | 55pF @ 50V |
| Voltan - Breakdown | Die |
| VGS (th) (Max) @ Id | 160 mOhm @ 500mA, 5V |
| Teknologi | GaNFET (Gallium Nitride) |
| Siri | eGaN® |
| Rosh Status | Tray |
| Rds On (Max) @ Id, VGS | 2.7A (Ta) |
| polarisasi | - |
| Nama lain | 917-EPC8010ENGR EPC8010ENGJ |
| Suhu Operasi | -40°C ~ 150°C (TJ) |
| pemasangan Jenis | Surface Mount |
| Kelembapan Kepekaan Level (MSL) | 1 (Unlimited) |
| Nombor Bahagian pengilang | EPC8010ENGR |
| Input kemuatan (CISS) (Max) @ Vds | 0.48nC @ 5V |
| Gate Charge (QG) (Max) @ VGS | 2.5V @ 250µA |
| FET Ciri | N-Channel |
| berkembang Penerangan | N-Channel 100V 2.7A (Ta) Surface Mount Die |
| Parit untuk Source Voltan (Vdss) | - |
| Penerangan | TRANS GAN 100V 2.7A BUMPED DIE |
| Semasa - Drain berterusan (Id) @ 25 ° C | 100V |
| Nisbah kemuatan | - |
EPC
