Nombor Bahagian : |
EPC2101 |
Pengilang / jenama : |
EPC |
Penerangan : |
TRANS GAN ASYMMETRICAL HALF BRID |
Status RoHS : |
Lead percuma / RoHS Compliant |
Kuantiti Tersedia |
6393 pcs |
Helaian data |
EPC2101.pdf |
VGS (th) (Max) @ Id |
2.5V @ 3mA, 2.5V @ 12mA |
Pembekal Peranti Pakej |
Die |
Siri |
eGaN® |
Rds On (Max) @ Id, VGS |
11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V |
Power - Max |
- |
pembungkusan |
Tape & Reel (TR) |
Pakej / Kes |
Die |
Nama lain |
917-1181-2 |
Suhu Operasi |
-40°C ~ 150°C (TJ) |
pemasangan Jenis |
Surface Mount |
Tahap Sensitiviti Lembapan (MSL) |
1 (Unlimited) |
Pengilang Standard Lead Time |
14 Weeks |
Status Status Percuma / Rosh Status |
Lead free / RoHS Compliant |
Input kemuatan (CISS) (Max) @ Vds |
300pF @ 30V, 1200pF @ 30V |
Gate Charge (QG) (Max) @ VGS |
2.7nC @ 5V, 12nC @ 5V |
Jenis FET |
2 N-Channel (Half Bridge) |
FET Ciri |
GaNFET (Gallium Nitride) |
Parit untuk Source Voltan (Vdss) |
60V |
Penerangan terperinci |
Mosfet Array 2 N-Channel (Half Bridge) 60V 9.5A, 38A Surface Mount Die |
Semasa - Drain berterusan (Id) @ 25 ° C |
9.5A, 38A |