Nombor Bahagian : | EPC2022ENGRT |
---|---|
Pengilang / jenama : | EPC |
Penerangan : | TRANS GAN 100V 60A BUMPED DIE |
Status RoHS : | Lead percuma / RoHS Compliant |
Kuantiti Tersedia | 5747 pcs |
Helaian data | EPC2022ENGRT.pdf |
Voltan - Ujian | 1400pF @ 50V |
Voltan - Breakdown | Die |
VGS (th) (Max) @ Id | 3.2 mOhm @ 25A, 5V |
Teknologi | GaNFET (Gallium Nitride) |
Siri | eGaN® |
Rosh Status | Cut Tape (CT) |
Rds On (Max) @ Id, VGS | 90A (Ta) |
polarisasi | Die |
Nama lain | 917-1140-1 917-1140-1-ND 917-EPC2022ENGRCT\ |
Suhu Operasi | -40°C ~ 150°C (TJ) |
pemasangan Jenis | Surface Mount |
Kelembapan Kepekaan Level (MSL) | 1 (Unlimited) |
Nombor Bahagian pengilang | EPC2022ENGRT |
Input kemuatan (CISS) (Max) @ Vds | 13nC @ 5V |
Gate Charge (QG) (Max) @ VGS | 2.5V @ 12mA |
FET Ciri | N-Channel |
berkembang Penerangan | N-Channel 100V 90A (Ta) Surface Mount Die |
Parit untuk Source Voltan (Vdss) | - |
Penerangan | TRANS GAN 100V 60A BUMPED DIE |
Semasa - Drain berterusan (Id) @ 25 ° C | 100V |
Nisbah kemuatan | - |