| Nombor Bahagian : | EPC2012CENGR |
|---|---|
| Pengilang / jenama : | EPC |
| Penerangan : | TRANS GAN 200V 5A BUMPED DIE |
| Status RoHS : | Lead percuma / RoHS Compliant |
| Kuantiti Tersedia | 30059 pcs |
| Helaian data | EPC2012CENGR.pdf |
| Voltan - Ujian | 100pF @ 100V |
| Voltan - Breakdown | Die Outline (4-Solder Bar) |
| VGS (th) (Max) @ Id | 100 mOhm @ 3A, 5V |
| Teknologi | GaNFET (Gallium Nitride) |
| Siri | eGaN® |
| Rosh Status | Tape & Reel (TR) |
| Rds On (Max) @ Id, VGS | 5A (Ta) |
| polarisasi | Die |
| Nama lain | 917-EPC2012CENGRTR |
| Suhu Operasi | -40°C ~ 150°C (TJ) |
| pemasangan Jenis | Surface Mount |
| Kelembapan Kepekaan Level (MSL) | 1 (Unlimited) |
| Nombor Bahagian pengilang | EPC2012CENGR |
| Input kemuatan (CISS) (Max) @ Vds | 1nC @ 5V |
| Gate Charge (QG) (Max) @ VGS | 2.5V @ 1mA |
| FET Ciri | N-Channel |
| berkembang Penerangan | N-Channel 200V 5A (Ta) Surface Mount Die Outline (4-Solder Bar) |
| Parit untuk Source Voltan (Vdss) | - |
| Penerangan | TRANS GAN 200V 5A BUMPED DIE |
| Semasa - Drain berterusan (Id) @ 25 ° C | 200V |
| Nisbah kemuatan | - |
EPC
