Nombor Bahagian : | DMG6601LVT-7 |
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Pengilang / jenama : | Diodes Incorporated |
Penerangan : | MOSFET N/P-CH 30V 26TSOT |
Status RoHS : | Lead percuma / RoHS Compliant |
Kuantiti Tersedia | 394246 pcs |
Helaian data | DMG6601LVT-7.pdf |
VGS (th) (Max) @ Id | 1.5V @ 250µA |
Pembekal Peranti Pakej | TSOT-26 |
Siri | - |
Rds On (Max) @ Id, VGS | 55 mOhm @ 3.4A, 10V |
Power - Max | 850mW |
pembungkusan | Tape & Reel (TR) |
Pakej / Kes | SOT-23-6 Thin, TSOT-23-6 |
Nama lain | DMG6601LVT-7DITR DMG6601LVT7 |
Suhu Operasi | -55°C ~ 150°C (TJ) |
pemasangan Jenis | Surface Mount |
Tahap Sensitiviti Lembapan (MSL) | 1 (Unlimited) |
Pengilang Standard Lead Time | 32 Weeks |
Status Status Percuma / Rosh Status | Lead free / RoHS Compliant |
Input kemuatan (CISS) (Max) @ Vds | 422pF @ 15V |
Gate Charge (QG) (Max) @ VGS | 12.3nC @ 10V |
Jenis FET | N and P-Channel |
FET Ciri | Logic Level Gate |
Parit untuk Source Voltan (Vdss) | 30V |
Penerangan terperinci | Mosfet Array N and P-Channel 30V 3.8A, 2.5A 850mW Surface Mount TSOT-26 |
Semasa - Drain berterusan (Id) @ 25 ° C | 3.8A, 2.5A |
Nombor Bahagian Asas | DMG6601 |