Nombor Bahagian : | BUK9E4R9-60E,127 |
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Pengilang / jenama : | NXP Semiconductors / Freescale |
Penerangan : | MOSFET N-CH 60V 100A I2PAK |
Status RoHS : | Lead percuma / RoHS Compliant |
Kuantiti Tersedia | 4946 pcs |
Helaian data | |
VGS (th) (Max) @ Id | 2.1V @ 1mA |
VGS (Max) | ±10V |
Teknologi | MOSFET (Metal Oxide) |
Pembekal Peranti Pakej | I2PAK |
Siri | TrenchMOS™ |
Rds On (Max) @ Id, VGS | 4.5 mOhm @ 25A, 10V |
Kuasa Penyebaran (Max) | 234W (Tc) |
pembungkusan | Tube |
Pakej / Kes | TO-262-3 Long Leads, I²Pak, TO-262AA |
Nama lain | 568-9876-5 934066657127 BUK9E4R960E127 |
Suhu Operasi | -55°C ~ 175°C (TJ) |
pemasangan Jenis | Through Hole |
Tahap Sensitiviti Lembapan (MSL) | 1 (Unlimited) |
Status Status Percuma / Rosh Status | Lead free / RoHS Compliant |
Input kemuatan (CISS) (Max) @ Vds | 9710pF @ 25V |
Gate Charge (QG) (Max) @ VGS | 65nC @ 5V |
Jenis FET | N-Channel |
FET Ciri | - |
Drive Voltan (Max Rds On, Min Rds On) | 5V, 10V |
Parit untuk Source Voltan (Vdss) | 60V |
Penerangan terperinci | N-Channel 60V 100A (Tc) 234W (Tc) Through Hole I2PAK |
Semasa - Drain berterusan (Id) @ 25 ° C | 100A (Tc) |