Nombor Bahagian : | APTM120U10DAG |
---|---|
Pengilang / jenama : | Microsemi |
Penerangan : | MOSFET N-CH 1200V 116A SP6 |
Status RoHS : | Lead percuma / RoHS Compliant |
Kuantiti Tersedia | 4483 pcs |
Helaian data | 1.APTM120U10DAG.pdf2.APTM120U10DAG.pdf |
VGS (th) (Max) @ Id | 5V @ 20mA |
VGS (Max) | ±30V |
Teknologi | MOSFET (Metal Oxide) |
Pembekal Peranti Pakej | SP6 |
Siri | - |
Rds On (Max) @ Id, VGS | 120 mOhm @ 58A, 10V |
Kuasa Penyebaran (Max) | 3290W (Tc) |
pembungkusan | Bulk |
Pakej / Kes | SP6 |
Suhu Operasi | -40°C ~ 150°C (TJ) |
pemasangan Jenis | Chassis Mount |
Tahap Sensitiviti Lembapan (MSL) | 1 (Unlimited) |
Status Status Percuma / Rosh Status | Lead free / RoHS Compliant |
Input kemuatan (CISS) (Max) @ Vds | 28900pF @ 25V |
Gate Charge (QG) (Max) @ VGS | 1100nC @ 10V |
Jenis FET | N-Channel |
FET Ciri | - |
Drive Voltan (Max Rds On, Min Rds On) | 10V |
Parit untuk Source Voltan (Vdss) | 1200V |
Penerangan terperinci | N-Channel 1200V 160A (Tc) 3290W (Tc) Chassis Mount SP6 |
Semasa - Drain berterusan (Id) @ 25 ° C | 160A (Tc) |