Nombor Bahagian : |
AOI7S65 |
Pengilang / jenama : |
Alpha and Omega Semiconductor, Inc. |
Penerangan : |
MOSFET N-CH 650V 7A TO251A |
Status RoHS : |
Lead percuma / RoHS Compliant |
Kuantiti Tersedia |
41434 pcs |
Helaian data |
1.AOI7S65.pdf2.AOI7S65.pdf |
VGS (th) (Max) @ Id |
4V @ 250µA |
VGS (Max) |
±30V |
Teknologi |
MOSFET (Metal Oxide) |
Pembekal Peranti Pakej |
TO-251A |
Siri |
aMOS™ |
Rds On (Max) @ Id, VGS |
650 mOhm @ 3.5A, 10V |
Kuasa Penyebaran (Max) |
89W (Tc) |
pembungkusan |
Tube |
Pakej / Kes |
TO-251-3 Stub Leads, IPak |
Suhu Operasi |
-55°C ~ 150°C (TJ) |
pemasangan Jenis |
Through Hole |
Tahap Sensitiviti Lembapan (MSL) |
1 (Unlimited) |
Status Status Percuma / Rosh Status |
Lead free / RoHS Compliant |
Input kemuatan (CISS) (Max) @ Vds |
434pF @ 100V |
Gate Charge (QG) (Max) @ VGS |
9.2nC @ 10V |
Jenis FET |
N-Channel |
FET Ciri |
- |
Drive Voltan (Max Rds On, Min Rds On) |
10V |
Parit untuk Source Voltan (Vdss) |
650V |
Penerangan terperinci |
N-Channel 650V 7A (Tc) 89W (Tc) Through Hole TO-251A |
Semasa - Drain berterusan (Id) @ 25 ° C |
7A (Tc) |