Nombor Bahagian : | 2SK3666-3-TB-E |
---|---|
Pengilang / jenama : | AMI Semiconductor / ON Semiconductor |
Penerangan : | JFET N-CH 10MA 200MW 3CP |
Status RoHS : | Lead percuma / RoHS Compliant |
Kuantiti Tersedia | 301721 pcs |
Helaian data | 2SK3666-3-TB-E.pdf |
Voltan - Cutoff (VGS off) @ Id | 180mV @ 1µA |
Pembekal Peranti Pakej | 3-CP |
Siri | - |
Rintangan - RDS (On) | 200 Ohms |
Power - Max | 200mW |
pembungkusan | Cut Tape (CT) |
Pakej / Kes | TO-236-3, SC-59, SOT-23-3 |
Nama lain | 869-1107-1 |
Suhu Operasi | 150°C (TJ) |
pemasangan Jenis | Surface Mount |
Tahap Sensitiviti Lembapan (MSL) | 1 (Unlimited) |
Pengilang Standard Lead Time | 4 Weeks |
Status Status Percuma / Rosh Status | Lead free / RoHS Compliant |
Input kemuatan (CISS) (Max) @ Vds | 4pF @ 10V |
Jenis FET | N-Channel |
Parit untuk Source Voltan (Vdss) | 30V |
Penerangan terperinci | JFET N-Channel 10mA 200mW Surface Mount 3-CP |
Drain semasa (Id) - Max | 10mA |
Semasa - Drain (IDSS) @ Vds (VGS = 0) | 1.2mA @ 10V |
Nombor Bahagian Asas | 2SK3666 |